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A photoluminescence study of the effect of well thickness in strained InGaAs/AlGaAs heterostructures grown by molecular beam epitaxy
A photoluminescence study of the effect of well thickness in strained InGaAs/AlGaAs heterostructures grown by molecular beam epitaxy
A photoluminescence study of the effect of well thickness in strained InGaAs/AlGaAs heterostructures grown by molecular beam epitaxy
Yoon, S. F. (Autor:in) / Radhakrishnan, K. (Autor:in) / Li, H. M. (Autor:in) / Zhang, D. H. (Autor:in)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 9 ; 1834
01.01.1994
1834 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
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