MBE Growth of 2.3μm InGaAsSb/AlGaAsSb Strained Multiple Quantum Well Diode Lasers

Zhang, T.C. / Ni, Q.F. / Liu, X.Z. et al. | British Library Online Contents | 2013

Optical properties of GaSb-AlSb heterostructures grown by molecular beam epitaxy

Lambert, B. / Toudic, Y. / Rouillard, Y. et al. | British Library Online Contents | 1993

Non-annealed ohmic contacts to p-GaSb grown by molecular beam epitaxy

Vogt, A. / Simon, A. / Weber, J. et al. | British Library Online Contents | 1999

A photoluminescence study of the effect of well thickness in strained InGaAs/AlGaAs heterostructures grown by molecular beam epitaxy

Yoon, S. F. / Radhakrishnan, K. / Li, H. M. et al. | British Library Online Contents | 1994

Molecular beam epitaxy of GaSb with high concentration of Mn

Matsukura, F. / Abe, E. / Ohno, Y. et al. | British Library Online Contents | 2000