The effect of interruption during the growth of strained GaAs/InGaAs/GaAs quantum wells by molecular beam epitaxy

Yoon, S. F. / Li, H. M. / Radhakrishnan, K. et al. | British Library Online Contents | 1993

A photoluminescence study of the effect of well thickness in strained InGaAs/AlGaAs heterostructures grown by molecular beam epitaxy

Yoon, S. F. / Radhakrishnan, K. / Li, H. M. et al. | British Library Online Contents | 1994

Analysis of indium surface segregation in molecular beam epitaxy of InGaAs/GaAs quantum wells

Yamaguchi, K. / Okada, T. / Hiwatashi, F. | British Library Online Contents | 1997

Photoluminescence of piezoelectric strained InGaAs-GaAs multi-quantum well p-i-n structures

David, J. P. R. / Sale, T. E. / Pabla, A. S. et al. | British Library Online Contents | 1995

Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy

Buyanova, I. A. / Chen, W. M. / Monemar, B. et al. | British Library Online Contents | 2000