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Transmission electron microscopy investigation of extended defects in heavily Se-doped bulk GaSb
Transmission electron microscopy investigation of extended defects in heavily Se-doped bulk GaSb
Transmission electron microscopy investigation of extended defects in heavily Se-doped bulk GaSb
Doerschel, I. (Autor:in) / Fornari, R.
01.01.1994
142 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
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