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Transmission electron microscopy investigation of extended defects in heavily Se-doped bulk GaSb

Doerschel, I.

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Transmission electron microscopy investigation of extended defects in heavily Se-doped bulk GaSb

Doerschel, I.

Transmission electron microscopy investigation of extended defects in heavily Se-doped bulk GaSb

Doerschel, I.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Transmission electron microscopy investigation of extended defects in heavily Se-doped bulk GaSb

Contributors:

Doerschel, I. (author) / Fornari, R.

Published in:

2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies ; 142

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 28

Publication date:

1994-01-01

Size:

142 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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