Current gain deterioration in carbon-doped AlGaAs/GaAs heterojunction bipolar transistors during high-temperature bias stress tests: Fid-Bau Portal

Current gain deterioration in carbon-doped AlGaAs/GaAs heterojunction bipolar transistors during high-temperature bias stress tests

Ishibashi, T. / Sugahara, H. / Ito, H. / Nittono, T.

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Current gain deterioration in carbon-doped AlGaAs/GaAs heterojunction bipolar transistors during high-temperature bias stress tests

Ishibashi, T. / Sugahara, H. / Ito, H. / Nittono, T.

Current gain deterioration in carbon-doped AlGaAs/GaAs heterojunction bipolar transistors during high-temperature bias stress tests

Ishibashi, T. / Sugahara, H. / Ito, H. / Nittono, T.

Zugriff

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Bestellung bei Subito €

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Titel:

Current gain deterioration in carbon-doped AlGaAs/GaAs heterojunction bipolar transistors during high-temperature bias stress tests

Beteiligte:

Ishibashi, T. (Autor:in) / Sugahara, H. (Autor:in) / Ito, H. (Autor:in) / Nittono, T. (Autor:in) / Fornani, R.

Erschienen in:

2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies ; 257

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 28

Erscheinungsdatum:

01.01.1994

Format / Umfang:

257 pages

ISSN:

0921-5107

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Unbekannt

Klassifikation:

DDC: 620.11

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