Current gain deterioration in carbon-doped AlGaAs/GaAs heterojunction bipolar transistors during high-temperature bias stress tests: Fid-Bau Portal

Current gain deterioration in carbon-doped AlGaAs/GaAs heterojunction bipolar transistors during high-temperature bias stress tests

Ishibashi, T. / Sugahara, H. / Ito, H. / Nittono, T.

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Current gain deterioration in carbon-doped AlGaAs/GaAs heterojunction bipolar transistors during high-temperature bias stress tests

Ishibashi, T. / Sugahara, H. / Ito, H. / Nittono, T.

Current gain deterioration in carbon-doped AlGaAs/GaAs heterojunction bipolar transistors during high-temperature bias stress tests

Ishibashi, T. / Sugahara, H. / Ito, H. / Nittono, T.

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Check availability in my library

Order at Subito €

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Document information

Title:

Current gain deterioration in carbon-doped AlGaAs/GaAs heterojunction bipolar transistors during high-temperature bias stress tests

Contributors:

Ishibashi, T. (author) / Sugahara, H. (author) / Ito, H. (author) / Nittono, T. (author) / Fornani, R.

Published in:

2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies ; 257

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 28

Publication date:

1994-01-01

Size:

257 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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