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Temperature effects on synchrotron-radiation-excited Si atomic layer epitaxy using disilane
Temperature effects on synchrotron-radiation-excited Si atomic layer epitaxy using disilane
Temperature effects on synchrotron-radiation-excited Si atomic layer epitaxy using disilane
Akazawa, H. (Autor:in)
APPLIED SURFACE SCIENCE ; 82/83 ; 394
01.01.1994
394 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
621.35
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