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High quality InAlAs grown in InP substrates by molecular beam epitaxy at very high arsenic overpressures
High quality InAlAs grown in InP substrates by molecular beam epitaxy at very high arsenic overpressures
High quality InAlAs grown in InP substrates by molecular beam epitaxy at very high arsenic overpressures
Yoon, S. F. (Autor:in) / Miao, Y. B. (Autor:in) / Radhakrishnan, K. (Autor:in) / Swaminathan, S. (Autor:in)
JOURNAL OF MATERIALS SCIENCE LETTERS ; 14 ; 1374
01.01.1995
1374 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
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