High quality InAlAs grown in InP substrates by molecular beam epitaxy at very high arsenic overpressures: Fid-Bau Portal

High quality InAlAs grown in InP substrates by molecular beam epitaxy at very high arsenic overpressures

Yoon, S. F. / Miao, Y. B. / Radhakrishnan, K. / Swaminathan, S.

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High quality InAlAs grown in InP substrates by molecular beam epitaxy at very high arsenic overpressures

Yoon, S. F. / Miao, Y. B. / Radhakrishnan, K. / Swaminathan, S.

High quality InAlAs grown in InP substrates by molecular beam epitaxy at very high arsenic overpressures

Yoon, S. F. / Miao, Y. B. / Radhakrishnan, K. / Swaminathan, S.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

High quality InAlAs grown in InP substrates by molecular beam epitaxy at very high arsenic overpressures

Contributors:

Yoon, S. F. (author) / Miao, Y. B. (author) / Radhakrishnan, K. (author) / Swaminathan, S. (author)

Published in:

JOURNAL OF MATERIALS SCIENCE LETTERS ; 14 ; 1374

Publication date:

1995-01-01

Size:

1374 pages

ISSN:

0261-8028

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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