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New Experimental Methods of Detection the Paramagnetic Recombination Centers in Silicon p-n Junctions and Diodes
New Experimental Methods of Detection the Paramagnetic Recombination Centers in Silicon p-n Junctions and Diodes
New Experimental Methods of Detection the Paramagnetic Recombination Centers in Silicon p-n Junctions and Diodes
Vlasenko, L. S. (Autor:in) / Vlasenko, M. P. (Autor:in)
MATERIALS SCIENCE FORUM ; 1537-1542
01.01.1995
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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British Library Online Contents | 1995
|Spin Dependent Recombination: an Improved Theory Applied to Deep Centers in Silicon
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|DLTS of Recombination Centers in Semiconductors
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|Detection of Paramagnetic Centers on Surfaces of Amorphous-SiO~2 Fine Grains Using Positronium
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