Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination

Dautrich, M. S. / Lenahan, P. M. / Lelis, A. J. | British Library Online Contents | 2006

Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors

Meyer, D. J. / Dautrich, M. S. / Lenahan, P. M. et al. | British Library Online Contents | 2005

Spin Dependent Recombination: an Improved Theory Applied to Deep Centers in Silicon

Lannoo, M. / Stievenard, D. / Deresmes, D. et al. | British Library Online Contents | 1993

Silicon Carbide Power Field-Effect Transistors

Zhao, J. H. | British Library Online Contents | 2005

Spin Dependent Recombination and EPR of Surface Paramagnetic Centers in Crystalline and Porous Silicon

Laiho, R. / Vlasenko, L. S. / Vlasenko, M. P. | British Library Online Contents | 1995