Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Spin Dependent Recombination: an Improved Theory Applied to Deep Centers in Silicon
Spin Dependent Recombination: an Improved Theory Applied to Deep Centers in Silicon
Spin Dependent Recombination: an Improved Theory Applied to Deep Centers in Silicon
Lannoo, M. (Autor:in) / Stievenard, D. (Autor:in) / Deresmes, D. (Autor:in) / Vuillaume, D. (Autor:in)
MATERIALS SCIENCE FORUM ; 1359
01.01.1993
1359 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2004
|British Library Online Contents | 1995
|British Library Online Contents | 2006
|Application of spin dependent recombination for investigation of point defects in irradiated silicon
British Library Online Contents | 1997
|DLTS of Recombination Centers in Semiconductors
British Library Online Contents | 1993
|