Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Ga Bound Excitons in 6H-SiC
Ga Bound Excitons in 6H-SiC
Ga Bound Excitons in 6H-SiC
Henry, A. (Autor:in) / Hallin, C. (Autor:in) / Ivanov, I. G. (Autor:in) / Bergman, J. P. (Autor:in) / Kordina, O. (Autor:in) / Monemar, B. (Autor:in) / Janzen, E. (Autor:in)
MATERIALS SCIENCE FORUM ; 91-96
01.01.1995
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Microscopic Spatial Distribution of Bound Excitons in High-Quality ZnO
British Library Online Contents | 2005
|Time Resolved PL Study of Multi Bound Excitons in 3C SiC
British Library Online Contents | 1998
|Time-Resolved Photoluminescence Study of Bound and Free Excitons in 4H SiC
British Library Online Contents | 2000
|Intermediately Bound Excitons in Wurtzite Type Semiconductors Doped with Transition Metal Impurities
British Library Online Contents | 1995
|Excitons bound to nitrogen complexes in heavily doped GaAs1-xNx grown on GaAs misoriented substrates
British Library Online Contents | 2004
|