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Growth of Zn -doped Al~xGa~1~-~xAs (x = 0-0.65) by low pressure metal organic vapour phase epitaxy
Growth of Zn -doped Al~xGa~1~-~xAs (x = 0-0.65) by low pressure metal organic vapour phase epitaxy
Growth of Zn -doped Al~xGa~1~-~xAs (x = 0-0.65) by low pressure metal organic vapour phase epitaxy
Li, G. (Autor:in) / Jagadish, C. (Autor:in)
APPLIED SURFACE SCIENCE ; 92 ; 138-141
01.01.1996
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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