Growth of Zn �-doped Al~xGa~1~-~xAs (x = 0-0.65) by low pressure metal organic vapour phase epitaxy: Fid-Bau Portal

Growth of Zn -doped Al~xGa~1~-~xAs (x = 0-0.65) by low pressure metal organic vapour phase epitaxy

Li, G. / Jagadish, C.

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Growth of Zn -doped Al~xGa~1~-~xAs (x = 0-0.65) by low pressure metal organic vapour phase epitaxy

Li, G. / Jagadish, C.

Growth of Zn -doped Al~xGa~1~-~xAs (x = 0-0.65) by low pressure metal organic vapour phase epitaxy

Li, G. / Jagadish, C.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Growth of Zn -doped Al~xGa~1~-~xAs (x = 0-0.65) by low pressure metal organic vapour phase epitaxy

Contributors:

Li, G. (author) / Jagadish, C. (author)

Published in:

APPLIED SURFACE SCIENCE ; 92 ; 138-141

Publication date:

1996-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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