Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
The leakage current mechanism of PZT thin films deposited by in-situ sputtering
The leakage current mechanism of PZT thin films deposited by in-situ sputtering
The leakage current mechanism of PZT thin films deposited by in-situ sputtering
Hwang, Y. S. (Autor:in) / Paek, S. H. (Autor:in) / Mah, J. P. (Autor:in)
JOURNAL OF MATERIALS SCIENCE LETTERS ; 15 ; 1030-1031
01.01.1996
2 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Field electron emission from HfNxOy thin films deposited by direct current sputtering
British Library Online Contents | 2008
|Nanostructured V2O5 thin films deposited at low sputtering power
British Library Online Contents | 2015
|Cr-doped TiO2 thin films deposited by RF-sputtering
British Library Online Contents | 2010
|AlNxOy thin films deposited by DC reactive magnetron sputtering
British Library Online Contents | 2010
|Structure of Cu-W Thin Films Deposited by Magnetron Sputtering
British Library Online Contents | 2008
|