Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Investigation of whisker defects on molecular beam epitaxy grown GaAs layers
Investigation of whisker defects on molecular beam epitaxy grown GaAs layers
Investigation of whisker defects on molecular beam epitaxy grown GaAs layers
Kadhim, N. J. (Autor:in) / Mukherjee, D. (Autor:in)
JOURNAL OF MATERIALS SCIENCE LETTERS ; 15 ; 1330-1331
01.01.1996
2 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Investigation of ripple defects on molecular beam epitaxy grown GaAs layers
British Library Online Contents | 1993
|Investigations of surface defects of GaAs grown by molecular beam epitaxy
British Library Online Contents | 2002
|Photoluminescence in degenerate p-type GaAs layers grown by molecular beam epitaxy
British Library Online Contents | 1995
|Some effects in heavy Si-doped GaAs layers grown by molecular beam epitaxy
British Library Online Contents | 1993
|Positron annihilation studies of defects in molecular beam epitaxy grown III-V layers
British Library Online Contents | 1995
|