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In Situ Study of the Accumulation of Ion-Beam-Induced Damage in Single Crystal 3C Silicon Carbide
In Situ Study of the Accumulation of Ion-Beam-Induced Damage in Single Crystal 3C Silicon Carbide
In Situ Study of the Accumulation of Ion-Beam-Induced Damage in Single Crystal 3C Silicon Carbide
Weber, W. J. (Autor:in) / Yu, N. (Autor:in)
MATERIALS SCIENCE FORUM ; 155-158
01.01.1997
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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