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Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire
Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire
Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire
Rouviere, J. L. (Autor:in) / Arlery, M. (Autor:in) / Niebuhr, R. (Autor:in) / Bachem, K. H. (Autor:in) / Briot, O. (Autor:in) / Aulombard, R. L. / Cavenett, B. C. / Gil, B. / Triboulet, R.
01.01.1997
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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