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Investigation of GaN layer grown on different low misoriented sapphire by MOCVD
Investigation of GaN layer grown on different low misoriented sapphire by MOCVD
Investigation of GaN layer grown on different low misoriented sapphire by MOCVD
APPLIED SURFACE SCIENCE ; 255 ; 6121-6124
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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