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Structural Characterisation of GaN Layers on Sapphire Grown by MOCVD
Structural Characterisation of GaN Layers on Sapphire Grown by MOCVD
Structural Characterisation of GaN Layers on Sapphire Grown by MOCVD
Pecz, B. (Autor:in) / Di Forte-Poisson, M. A. (Autor:in) / Toth, L. (Autor:in) / Radnoczi, G. (Autor:in)
MATERIALS SCIENCE FORUM ; 264/268 ; 1255-1258
01.01.1998
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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