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Prismatic defects in GaN grown on 6H-SiC by molecular beam epitaxy
Prismatic defects in GaN grown on 6H-SiC by molecular beam epitaxy
Prismatic defects in GaN grown on 6H-SiC by molecular beam epitaxy
Vermaut, P. (Autor:in) / Ruterana, P. (Autor:in) / Nouet, G. (Autor:in) / Salvador, A. (Autor:in) / Morkoc, H. (Autor:in) / Aulombard, R. L. / Cavenett, B. C. / Gil, B. / Triboulet, R.
01.01.1997
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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