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Prismatic defects in GaN grown on 6H-SiC by molecular beam epitaxy
Prismatic defects in GaN grown on 6H-SiC by molecular beam epitaxy
Prismatic defects in GaN grown on 6H-SiC by molecular beam epitaxy
Vermaut, P. (author) / Ruterana, P. (author) / Nouet, G. (author) / Salvador, A. (author) / Morkoc, H. (author) / Aulombard, R. L. / Cavenett, B. C. / Gil, B. / Triboulet, R.
1997-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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