Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray' diffraction and photoluminescence: Fid-Bau Portal

Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray' diffraction and photoluminescence

Liu, Q. / Prost, W. / Tegude, F. J.

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Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray' diffraction and photoluminescence

Liu, Q. / Prost, W. / Tegude, F. J.

Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray' diffraction and photoluminescence

Liu, Q. / Prost, W. / Tegude, F. J.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

Seitennavigation

Dokumentinformationen

Ähnliche Titel

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Dokumentinformationen

Titel:

Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray' diffraction and photoluminescence

Beteiligte:

Liu, Q. (Autor:in) / Prost, W. (Autor:in) / Tegude, F. J. (Autor:in) / Jantz, W. / Baeumler, M.

Erschienen in:

Solid-State Materials for Advanced Technology ; 91-95

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 44

Erscheinungsdatum:

01.01.1997

Format / Umfang:

5 pages

ISSN:

0921-5107

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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