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Growth and characterization of strain-compensated InAsP/GaInP and InGaAs/GaInP multiple quantum wells
Growth and characterization of strain-compensated InAsP/GaInP and InGaAs/GaInP multiple quantum wells
Growth and characterization of strain-compensated InAsP/GaInP and InGaAs/GaInP multiple quantum wells
Tu, C. W. (Autor:in) / Mei, X. B. (Autor:in) / Yan, C. H. (Autor:in) / Bi, W. G. (Autor:in) / Henini, M. / Szweda, R.
01.01.1995
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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