Effects of Si doping on the strain relaxation of metamorphic (Al)GaInP buffers grown on GaAs substrates

Li, K. L. / Dong, J. R. / Sun, Y. R. et al. | British Library Online Contents | 2014

Effects of deep levels and Si-doping on GaInP material properties investigated by means of optical methods

Liu, Q. / Quedeweit, U. / Scheffer, F. et al. | British Library Online Contents | 1993

Assessment of layer structures for GaInP/GaAs-heterojunction bipolar transistors

Richter, E. / Brunner, F. / Gramlich, S. et al. | British Library Online Contents | 1999

Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure organometallic vapor phase epitaxy

Yoshikane, T. / Urakami, A. / Koizumi, A. et al. | British Library Online Contents | 2004

Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray' diffraction and photoluminescence

Liu, Q. / Prost, W. / Tegude, F. J. | British Library Online Contents | 1997