Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Characterization of 3C-SiC doped by nitrogen implantation
Characterization of 3C-SiC doped by nitrogen implantation
Characterization of 3C-SiC doped by nitrogen implantation
Lossy, R. (Autor:in) / Reicheft, W. (Autor:in) / Obermeier, E. (Autor:in) / Camassel, J. / Fricke, K. / Krozer, V. / Robert, J. L.
01.01.1997
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Ti-Ni ohmic contacts on 3C-SiC doped by nitrogen or phosphorus implantation
British Library Online Contents | 2010
|Transport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ Doping
British Library Online Contents | 2003
|British Library Online Contents | 2007
|Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation
British Library Online Contents | 2013
|British Library Online Contents | 2007
|