Characterization of 3C-SiC doped by nitrogen implantation: Fid-Bau Portal

Characterization of 3C-SiC doped by nitrogen implantation

Lossy, R. / Reicheft, W. / Obermeier, E.

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Characterization of 3C-SiC doped by nitrogen implantation

Lossy, R. / Reicheft, W. / Obermeier, E.

Characterization of 3C-SiC doped by nitrogen implantation

Lossy, R. / Reicheft, W. / Obermeier, E.

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Check availability in my library

Order at Subito €

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Document information

Title:

Characterization of 3C-SiC doped by nitrogen implantation

Contributors:

Lossy, R. (author) / Reicheft, W. (author) / Obermeier, E. (author) / Camassel, J. / Fricke, K. / Krozer, V. / Robert, J. L.

Published in:

High Temperature Electronics: Materials, Devices and Applications ; 156-159

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 46

Publication date:

1997-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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