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Effects of post-oxidation annealing on 3nm-thick low-temperature-grown gate oxide
Effects of post-oxidation annealing on 3nm-thick low-temperature-grown gate oxide
Effects of post-oxidation annealing on 3nm-thick low-temperature-grown gate oxide
Sakoda, T. (Autor:in) / Matsumura, M. (Autor:in) / Nishioka, Y. (Autor:in)
APPLIED SURFACE SCIENCE ; 117/118 ; 241-244
01.01.1997
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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