Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC

Cheong, K. Y. / Bahng, W. / Kim, N. K. | British Library Online Contents | 2005

Effects of the post nitridation anneal temperature on performances of the nano MOSFET with ultra-thin (<2.5nm) plasma nitrided gate dielectric

Chiu, H. Y. / Fang, Y. K. / Juang, F. R. | British Library Online Contents | 2012

UV assisted low temperature nitridation and post deposition oxidation technique for hafnium oxide gate dielectric

Son, S. Y. / Jang, J. H. / Kumar, P. et al. | British Library Online Contents | 2008

Radical Nitridation of Ultra-Thin SiO~2/SiC Structure

Yano, H. / Furumoto, Y. / Niwa, T. et al. | British Library Online Contents | 2004

Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs

Ariyoshi, K. / Harada, S. / Senzaki, J. et al. | British Library Online Contents | 2014