Formation of high-density hexagonal networks of InGaAs ridge quantum wires by atomic hydrogen-assisted selective molecular beam epitaxy

Ito, A. / Muranaka, T. / Jiang, C. et al. | British Library Online Contents | 2002

Evolution mechanism of heterointerface cross-section during growth of GaAs ridge quantum wires by selective molecular beam epitaxy

Sato, T. / Tamai, I. / Yoshida, S. et al. | British Library Online Contents | 2004

The effect of interruption during the growth of strained GaAs/InGaAs/GaAs quantum wells by molecular beam epitaxy

Yoon, S. F. / Li, H. M. / Radhakrishnan, K. et al. | British Library Online Contents | 1993

Barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) prepared by molecular beam epitaxy

Yarn, K. F. / Wang, Y. H. / Chen, M. S. | British Library Online Contents | 1995

Analysis of indium surface segregation in molecular beam epitaxy of InGaAs/GaAs quantum wells

Yamaguchi, K. / Okada, T. / Hiwatashi, F. | British Library Online Contents | 1997