Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
The effect of interruption during the growth of strained GaAs/InGaAs/GaAs quantum wells by molecular beam epitaxy
The effect of interruption during the growth of strained GaAs/InGaAs/GaAs quantum wells by molecular beam epitaxy
The effect of interruption during the growth of strained GaAs/InGaAs/GaAs quantum wells by molecular beam epitaxy
Yoon, S. F. (Autor:in) / Li, H. M. (Autor:in) / Radhakrishnan, K. (Autor:in) / Zhang, D. H. (Autor:in)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 8 ; 3122
01.01.1993
3122 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Optical studies of strained InGaAs/GaAs single quantum wells
| British Library Online Contents | 1994
Analysis of indium surface segregation in molecular beam epitaxy of InGaAs/GaAs quantum wells
| British Library Online Contents | 1997
Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells
| British Library Online Contents | 1995
Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence
| British Library Online Contents | 1993
| British Library Online Contents | 1994