Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Depth Profiling of Defects in Argon Irradiated Silicon Using Positron Beam Facility at Kalpakkam
Depth Profiling of Defects in Argon Irradiated Silicon Using Positron Beam Facility at Kalpakkam
Depth Profiling of Defects in Argon Irradiated Silicon Using Positron Beam Facility at Kalpakkam
Amarendra, G. (Autor:in) / Venugopal Rao, G. (Autor:in) / Nair, K. G. M. (Autor:in) / Viswanathan, B. (Autor:in) / Jean, Y. C. / Eldrup, M. / Schrader, D. M. / West, R. N.
01.01.1997
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Depth profiling of defects in nitrogen implanted silicon using a slow positron beam
British Library Online Contents | 1999
|British Library Online Contents | 1994
|British Library Online Contents | 2001
|Positron Depth-Profiling of Polymer Interfaces
British Library Online Contents | 1997
|Slow Positron Beam Facility in Orleans
British Library Online Contents | 2001
|