Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height

Kinoshita, A. / Ohyanagi, T. / Yatsuo, T. et al. | British Library Online Contents | 2010

Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses

Raynaud, C. / Nguyen, D.M. / Brosselard, P. et al. | British Library Online Contents | 2009

Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

Ota, C. / Nishio, J. / Hatakeyama, T. et al. | British Library Online Contents | 2007

Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties

Ota, C. / Nishio, J. / Hatakeyama, T. et al. | British Library Online Contents | 2006

Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC

Naretto, M. / Perrone, D. / Ferrero, S. et al. | British Library Online Contents | 2010