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High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiC
High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiC
High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiC
Sheppard, S. T. (Autor:in) / Lauer, V. (Autor:in) / Wondrak, W. (Autor:in) / Niemann, E. (Autor:in)
MATERIALS SCIENCE FORUM ; 264/268 ; 1077-1080
01.01.1998
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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