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Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition
Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition
Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition
Goetz, W. (Autor:in) / Johnson, N. M. (Autor:in)
MATERIALS SCIENCE FORUM ; 264/268 ; 1375-1380
01.01.1998
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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