A platform for research: civil engineering, architecture and urbanism
Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition
Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition
Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition
Goetz, W. (author) / Johnson, N. M. (author)
MATERIALS SCIENCE FORUM ; 264/268 ; 1375-1380
1998-01-01
6 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Scanning tunneling microscopy characterization of metalorganic chemical vapor deposition grown GaN
British Library Online Contents | 1997
|Observation of compensation in GaN films grown by metalorganic chemical vapor deposition
British Library Online Contents | 2001
|Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition
British Library Online Contents | 2002
|Characterization of GaN grown on SiC on Si/SiO~2/Si by metalorganic chemical vapor deposition
British Library Online Contents | 1999
|British Library Online Contents | 1998
|