Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Epitaxy of High Quality SiC Layers by CST
Epitaxy of High Quality SiC Layers by CST
Epitaxy of High Quality SiC Layers by CST
Yoshida, T. (Autor:in) / Nishio, Y. (Autor:in) / Lilov, S. K. (Autor:in) / Nishino, S. (Autor:in) / Pensl, G. / Morkoc, H. / Monemar, B. / Janzen, E.
01.01.1998
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
High Growth Rate Epitaxy of Thick 4H-SiC Layers
British Library Online Contents | 2000
|High quality ELO-GaN layers on GaN/Al"2O"3 patterned substrates by halide vapour phase epitaxy
British Library Online Contents | 1999
|Properties of AlN Layers Grown by Sublimation Epitaxy
British Library Online Contents | 2003
|High quality quantum dots fabricated by molecular beam epitaxy
British Library Online Contents | 1996
|Narrowband Landau emission from high purity GaAs layers grown by molecular beam epitaxy
British Library Online Contents | 1993
|