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High Growth Rate Epitaxy of Thick 4H-SiC Layers
High Growth Rate Epitaxy of Thick 4H-SiC Layers
High Growth Rate Epitaxy of Thick 4H-SiC Layers
Syvajarvi, M. (Autor:in) / Yakimova, R. (Autor:in) / Jacobsson, H. (Autor:in) / Linnarsson, M. K. (Autor:in) / Henry, A. (Autor:in) / Janzen, E. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 165-168
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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