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Application of spin dependent recombination for investigation of point defects in irradiated silicon
Application of spin dependent recombination for investigation of point defects in irradiated silicon
Application of spin dependent recombination for investigation of point defects in irradiated silicon
Afanasjev, M. M. (Autor:in) / Laiho, R. (Autor:in) / Viasenko, L. S. (Autor:in) / Vlasenko, M. P. (Autor:in)
MATERIALS SCIENCE FORUM ; 258/263 ; 559-564
01.01.1997
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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