Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Electrical and optical characterisation of defects induced in epitaxially grown n-Si during 1 keV noble gas ion bombardment
Electrical and optical characterisation of defects induced in epitaxially grown n-Si during 1 keV noble gas ion bombardment
Electrical and optical characterisation of defects induced in epitaxially grown n-Si during 1 keV noble gas ion bombardment
Deenapanray, P. N. K. (Autor:in) / Auret, F. D. (Autor:in) / Myburg, G. (Autor:in) / Meyer, W. E. (Autor:in) / Goodman, S. A. (Autor:in)
MATERIALS SCIENCE FORUM ; 258/263 ; 565-570
01.01.1997
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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