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Electrical and optical characterisation of defects induced in epitaxially grown n-Si during 1 keV noble gas ion bombardment
Electrical and optical characterisation of defects induced in epitaxially grown n-Si during 1 keV noble gas ion bombardment
Electrical and optical characterisation of defects induced in epitaxially grown n-Si during 1 keV noble gas ion bombardment
Deenapanray, P. N. K. (author) / Auret, F. D. (author) / Myburg, G. (author) / Meyer, W. E. (author) / Goodman, S. A. (author)
MATERIALS SCIENCE FORUM ; 258/263 ; 565-570
1997-01-01
6 pages
Article (Journal)
English
DDC:
620.11
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