Lateral-junction light emitting devices grown by molecular beam epitaxy on GaAs (311)A-oriented substrates

Vaccaro, P. O. / Ohnishi, H. / Fujita, K. | British Library Online Contents | 1998

Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy

Buyanova, I. A. / Chen, W. M. / Monemar, B. et al. | British Library Online Contents | 2000

Magnesium-Doped GaN Films Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates

Cheng, T. S. / Foxon, C. T. / Jeffs, N. J. et al. | British Library Online Contents | 1998

Spontaneous superlattice structures in AlxGa1−xAs/GaAs (100) grown by metalorganic vapor phase epitaxy

Pradhan, A. / Maitra, T. / Mukherjee, S. et al. | British Library Online Contents | 2018

Spontaneous superlattice structures in AlxGa1−xAs/GaAs (100) grown by metalorganic vapor phase epitaxy

Pradhan, A. / Maitra, T. / Mukherjee, S. et al. | British Library Online Contents | 2018