Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Characteristics of GaAs/AlAs superlattice structures grown on (311) oriented GaAs substrates by molecular beam epitaxy

    New search for: Yoon, S. F.
    New search for: Zhang, P. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Characteristics of GaAs/AlAs superlattice structures grown on (311) oriented GaAs substrates by molecular beam epitaxy

    New search for: Yoon, S. F.
    New search for: Zhang, P. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Characteristics of GaAs/AlAs superlattice structures grown on (311) oriented GaAs substrates by molecular beam epitaxy

    New search for: Yoon, S. F.
    New search for: Zhang, P. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Characteristics of GaAs/AlAs superlattice structures grown on (311) oriented GaAs substrates by molecular beam epitaxy

    Contributors:

    Yoon, S. F. (author) / Zhang, P. H. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 51 ; 219-223

    Publication date:

    1998-01-01

    Size:

    5 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Lateral-junction light emitting devices grown by molecular beam epitaxy on GaAs (311)A-oriented substrates

    Vaccaro, P. O. / Ohnishi, H. / Fujita, K. | British Library Online Contents | 1998

    Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy

    Buyanova, I. A. / Chen, W. M. / Monemar, B. et al. | British Library Online Contents | 2000

    Spontaneous superlattice structures in AlxGa1−xAs/GaAs (100) grown by metalorganic vapor phase epitaxy

    Pradhan, A. / Maitra, T. / Mukherjee, S. et al. | British Library Online Contents | 2018

    Magnesium-Doped GaN Films Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates

    Cheng, T. S. / Foxon, C. T. / Jeffs, N. J. et al. | British Library Online Contents | 1998

    Spontaneous superlattice structures in AlxGa1−xAs/GaAs (100) grown by metalorganic vapor phase epitaxy

    Pradhan, A. / Maitra, T. / Mukherjee, S. et al. | British Library Online Contents | 2018

    Back to top