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Lateral-junction light emitting devices grown by molecular beam epitaxy on GaAs (311)A-oriented substrates
Lateral-junction light emitting devices grown by molecular beam epitaxy on GaAs (311)A-oriented substrates
Lateral-junction light emitting devices grown by molecular beam epitaxy on GaAs (311)A-oriented substrates
Vaccaro, P. O. (Autor:in) / Ohnishi, H. (Autor:in) / Fujita, K. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 51 ; 94-98
01.01.1998
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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