Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBE
Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBE
Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBE
Nakashima, H. (Autor:in) / Kato, T. (Autor:in) / Maehashi, K. (Autor:in) / Nishida, T. (Autor:in) / Inoue, Y. (Autor:in) / Takeuchi, T. (Autor:in) / Inoue, K. (Autor:in) / Fischer, P. (Autor:in) / Christen, J. urgen (Autor:in) / Grundmann, M. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 51 ; 229-232
01.01.1998
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Photoluminescence in MOVPE-Grown Pseudomorphic InGaAs/GaAs Quantum Wells on Vicinal GaAs Surfaces
British Library Online Contents | 1994
|British Library Online Contents | 1995
|Deep traps at GaAs/GaAs interface grown by MBE-interruption growth technique
British Library Online Contents | 2007
|GaAs/AlAs lateral superlattices on vicinal surfaces: from growth issues to new electronic properties
British Library Online Contents | 1998
|British Library Online Contents | 1993
|