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Potential energy of two structures of = 11 <011> tilt grain boundary in silicon and germanium with empirical potentials and tight-binding methods
Potential energy of two structures of = 11 <011> tilt grain boundary in silicon and germanium with empirical potentials and tight-binding methods
Potential energy of two structures of = 11 <011> tilt grain boundary in silicon and germanium with empirical potentials and tight-binding methods
Chen, J. (Autor:in) / Lebouvier, B. (Autor:in) / Hairie, A. (Autor:in) / Nouet, G. (Autor:in) / Paumier, E. (Autor:in) / Dreysse, H. / Kawazoe, Y. / Wille, L. T. / Demangeat, C.
01.01.1998
5 pages
Aufsatz (Zeitschrift)
Englisch
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