Features of buried dielectric layers: ion beam synthesis in silicon by a high temperature sequential oxygen and nitrogen implantation with substoichiometric doses

Charnyi, L. A. / Danilin, A. B. / Drakin, K. A. et al. | British Library Online Contents | 1992

Effects of nitrogen ion implantation and implantation energy on surface properties and adhesion strength of TiN films deposited on aluminum by magnetron sputtering

Liu, Y. / Li, L. / Xu, M. et al. | British Library Online Contents | 2006

Wear behaviour of TiAlN films deposited on plasma nitrided high speed steel

Lii, D.-F. | British Library Online Contents | 1998

Quantitative study of the Si/SiO2 phase separation in substoichiometric silicon oxide films

Nicotra, G. / Spinella, C. / La Magna, A. et al. | British Library Online Contents | 2009

Novel synthesis of substoichiometric ultrafine titanium carbide

Lee, D. W. / Alexandrovskii, S. V. / Kim, B. K. | British Library Online Contents | 2004