Features of buried dielectric layers: ion beam synthesis in silicon by a high temperature sequential oxygen and nitrogen implantation with substoichiometric doses: Fid-Bau Portal

Features of buried dielectric layers: ion beam synthesis in silicon by a high temperature sequential oxygen and nitrogen implantation with substoichiometric doses

Charnyi, L. A. / Danilin, A. B. / Drakin, K. A. / Malinin, A. A.

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Features of buried dielectric layers: ion beam synthesis in silicon by a high temperature sequential oxygen and nitrogen implantation with substoichiometric doses

Charnyi, L. A. / Danilin, A. B. / Drakin, K. A. / Malinin, A. A.

Features of buried dielectric layers: ion beam synthesis in silicon by a high temperature sequential oxygen and nitrogen implantation with substoichiometric doses

Charnyi, L. A. / Danilin, A. B. / Drakin, K. A. / Malinin, A. A.

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Titel:

Features of buried dielectric layers: ion beam synthesis in silicon by a high temperature sequential oxygen and nitrogen implantation with substoichiometric doses

Beteiligte:

Charnyi, L. A. (Autor:in) / Danilin, A. B. (Autor:in) / Drakin, K. A. (Autor:in) / Malinin, A. A. (Autor:in)

Erschienen in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 15 ; 244

Erscheinungsdatum:

01.01.1992

Format / Umfang:

244 pages

ISSN:

0921-5107

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Unbekannt

Klassifikation:

DDC: 620.11

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